2024

Award

第71回（2024年春季）応用物理学会講演奨励賞

Mgイオン注入p-GaNにおけるNイオン連続注入の補償ドナー濃度低減効果
〇角田 健輔¹、片岡 恵太³、成田 哲生³、堀田 昌宏^1,2、加地 徹^1,2、須田 淳^1,2 (1.名大院工、2.名大未来研、3.豊田中研)
第71回応用物理学会春季学術講演会, 東京都市大学世田谷キャンパス, 2024/03/25, 25p-52A-1.

Mgチャネリングイオン注入および超高圧アニールを用いて作製した縦型GaN JBSダイオード
〇北川 和輝¹、Maciej Matys²、上杉 勉²、加地 徹²、堀田 昌宏^1,2、須田 淳^1,2 (1.名大院工、2.名大未来研)
第71回応用物理学会春季学術講演会, 東京都市大学世田谷キャンパス, 2024/03/25, 25p-52A-3.

International Presentations

S. Yamada, K. Tanaka, M. Arai, T. Kachi, and J. Suda, “Effects of Subsequent Annealing on Etching Resistance and Electrical Properties of n-type GaN Films Deposited by Reactive Sputtering Method”,
12^th International Workshop on Nitride Semiconductors (Honolulu, HI, US), 270.

M. Endo, J. Suda, and M. Horita, “Identification of deep levels originating from nitrogen interstitials in
n-type GaN”, 12^th International Workshop on Nitride Semiconductors (Honolulu, HI, US), 352.

T. Watanabe, H. Takahashi, A. Wakejima, Y. Ando, and J. Suda, “Proposal of AlGaN/GaN Gated-Anode Diode Model Incorporating Internal HEMT Structure for Loss Analysis towards Efficient Microwave Rectification”, 12^th International Workshop on Nitride Semiconductors (Honolulu, HI, US), 363.

K. Sumida, K. Kataoka, T. Narita, M. Horita, T. Kachi, and J. Suda, “Reduction of Compensating Donor Concentration by Sequential N-ion Implantation in Mg-ion Implanted p-GaN”, 12^th International Workshop on Nitride Semiconductors (Honolulu, HI, US), 364.

T. Hirata, M. Kanechika, T. Kachi, and J. Suda, “Systematic investigation of the effects of ultra-high-pressure post-deposition annealing on AlSiO/n-GaN MOS properties”, 12^th International Workshop on Nitride Semiconductors (Honolulu, HI, US), 366.

Y. Ichikawa, K. Ueno, T. Kondo, R. Tanaka, S. Takashima, and J. Suda, “Bias voltage and temperature dependence of threshold voltage instability due to positive bias stress in GaN planer MOSFETs with SiO₂ gate dielectric”, 12^th International Workshop on Nitride Semiconductors (Honolulu, HI, US), 367.

K. Tanaka, S. Yamada, M. Arai, T. Kachi, and J. Suda, “Lower Limit of Deposition Temperature for N-polar n-type GaN Films Deposited by Plasma-Assisted Reactive Sputtering”, 12^th International Workshop on Nitride Semiconductors (Honolulu, HI, US), 368.

K. Kitagawa, M. Matys, T. Uesugi, M. Horita, T. Kachi, and J. Suda, “Characterization of GaN vertical JBS diodes fabricated by channeled implantation of Mg ions and subsequent ultra-high-pressure annealing”,
12^th International Workshop on Nitride Semiconductors (Honolulu, HI, US), 379.

K. Hayashi, M. Horita, R. Tanaka, S. Takashima, K. Ueno, and J. Suda, “Electron traps with extremely long capture time constant related to threading dislocations in n-type GaN with oxygen ion implantation and annealing”, 12^th International Workshop on Nitride Semiconductors (Honolulu, HI, US), P158.

K. Kitagawa, M. Matys, T. Narita, T. Uesugi, J. Suda, and T. Kachi, “Fabrication of vertical GaN junction barrier Schottky diodes using Mg ion implantation“, 15th Topical Workshop on Heterostructure Microelectronics (Miyagi, Japan), 7-4.

国内会議