International Presentations
(Invited) Jun Suda ” GaN-on-GaN Devices for Next Generation Electronics” 15th International Conference on Nitride Semiconductors (Malmö, Sweden), ED-Thu-B6
Testu Kachi, Takumi Hirata, Kenji Ito, Tetsuo Narita and Jun Suda “Effects of the high pressure annealing on threshold voltages in GaN-MOSFETs”, 15th International Conference on Nitride Semiconductors (Malmö, Sweden), ED-Tue-P14
TaeGi Lee, Akira Yoshikawa, Sho Sugiyama, Manabu Arai, Yuji Ando and Jun Suda, Hiroshi Amano “Metalorganic Vapor Phase Epitaxy Grown Pseudomorphic AlN/GaN/AlN HEMTs on AlN Substrates with Breakdown Field of 2 MV/cm”, 15th International Conference on Nitride Semiconductors (Malmö, Sweden), ED-Mon-P4
Kensuke Sumida, Kacper Sierakowski, Tomasz Sochacki, Masahiro Horita, Michał Boćkowski, Tetsu Kachi and Jun Suda, “Ultra-high-pressure annealing with a carbon capping layer for activation of Mg ion-implanted GaN”, 15th International Conference on Nitride Semiconductors (Malmö, Sweden), PC-Mon-5
Kazuki Kitagawa, Tsutomu Uesugi, Masahiro Horita, Tetsu Kachi and Jun Suda, “Breakdown Voltage Analysis of Vertical GaN p-n Junction Diodes with Junction Termination Extension Formed by Channeled Mg Implantation”, 15th International Conference on Nitride Semiconductors (Malmö, Sweden), ED-Thu-B13
Yuki Ichikawa, Katsunori Ueno, Tsurugi Kondo, Ryo Tanaka, Shinya Takashima and Jun Suda, “Unified explanation of bias dependence of threshold voltage shift under positive bias stress in GaN planer MOSFETs with SiO2 gate dielectric”, 15th International Conference on Nitride Semiconductors (Malmö, Sweden), ED-Fri-B5
Nami Kusunoki, Yuki Ichikawa, Tohru Oka, Nariaki Tanaka, Kazuya Hasegawa, Takatomi Izumi, Takaki Niwa
and Jun Suda, “Anomalous Output Characteristics in GaN Vertical Trench MOSFETs under Large Drain Voltage”, 15th International Conference on Nitride Semiconductors (Malmö, Sweden), ED-Thu-B10
Yusuke Hirayama, Masahiro Horita, Jun Suda, Shota Kaneki and Hajime Fujikura, “Extremely small trap concentrations in quartz-free hydride vapor phase epitaxy-grown n-type GaN confirmed by capacitance transient spectroscopy”, 15th International Conference on Nitride Semiconductors (Malmö, Sweden), GR-Mon-P4
Fumiyuki Sei, Kenji Ito, Masahiro Horita, Tetsu Kachi and Jun Suda, “New Interpretation of Fermi-level Pinning Behavior in P-type GaN MOS Capacitors via Temperature-Dependent C-V measurements”, 15th International Conference on Nitride Semiconductors (Malmö, Sweden), ED-Thu-P24