米国ハワイ州にて2024/11/3-8に開催されたIWN 2024 (International Workshop on Nitride Semiconductors)において、当研究室から以下の発表が行われました。
653
(INVITED) Characterization of Extrinsic and Intrinsic Point Defects in Homoepitaxial GaN
Jun Suda, Masahiro Horita;
Nagoya University, Nagoya, Aichi, Japan.
270
Effects of Subsequent Annealing on Etching Resistance and Electrical Properties of n-type GaN Films Deposited by Reactive Sputtering Method
Shinji Yamada1, Kiho Tanaka1, Manabu Arai2, Tetsu Kachi2, Jun Suda1,2;
1 Graduate School of Engineering, Nagoya University, Nagoya, Aichi, Japan. 2 IMaSS, Nagoya University, Nagoya, Aichi, Japan.
352
Identification of deep levels originating from nitrogen interstitials in n-type GaN
Meguru Endo, Jun Suda, Masahiro Horita;
Nagoya University, Nagoya, Aichi, Japan.
363
Proposal of AlGaN/GaN Gated-Anode Diode Model Incorporating Internal HEMT Structure for Loss Analysis towards Efficient Microwave Rectification
Tomoya Watanabe1, Hidemasa Takahashi1, Akio Wakejima2, Yuji Ando1,3, Jun Suda1,3;
1 Department of Electronics, Nagoya University, Nagoya, Aichi, Japan. 2 Research and Education Institute for Semiconductors and Informatics, Kumamoto University, Kumamoto, Kumamoto, Japan. 3 IMaSS, Nagoya University, Nagoya, Aichi, Japan.
364
Reduction of Compensating Donor Concentration by Sequential N-ion Implantation in Mg-ion Implanted p-GaN
Kensuke Sumida1, Keita Kataoka2, Tetsuo Narita2, Masahiro Horita1,3, Tetsu Kachi1,3, Jun Suda1,3;
1 Department of Electronics, Nagoya University, Nagoya, Aichi, Japan. 2 Toyota Central R&D Labs., Inc., Nagakute, Aichi, Japan. 3 Nagoya University, IMaSS, Nagoya, Aichi, Japan.
366
Systematic investigation of the effects of ultra-high-pressure post-deposition annealing on AlSiO/n-GaN MOS properties
Takumi Hirata, Masakazu Kanechika, Tetsu Kachi, Jun Suda;
Nagoya University, Nagoya, Aichi, Japan.
367
Bias voltage and temperature dependence of threshold voltage instability due to positive bias stress in GaN planer MOSFETs with SiO2 gate dielectric
Yuki Ichikawa1, Katsunori Ueno2, Tsurugi Kondo2, Ryo Tanaka2, Shinya Takashima3, Jun Suda1,4;
1 Nagoya University, Nagoya, Aichi, Japan. 2 Fuji Electric Co., Ltd, Hino, Tokyo, Japan. 3 Fuji Electric, Hino, Tokyo, Japan. 4 IMass, Nagoya, Aichi, Japan.
368
Lower Limit of Deposition Temperature for N-polar n-type GaN Films Deposited by Plasma-Assisted Reactive Sputtering
Kiho Tanaka1, Shinji Yamada1, Manabu Arai2, Tetsu Kachi2, Jun Suda1,2;
1 Nagoya University, Nagoya, Aichi, Japan. 2 IMaSS, Nagoya, Aichi, Japan.
379
Characterization of GaN vertical JBS diodes fabricated by channeled implantation of Mg ions and subsequent ultra-high-pressure annealing
Kazuki Kitagawa1, Maciej Matys2, Tsutomu Uesugi2, Masahiro Horita1, Tetsu Kachi2, Jun Suda1;
1 Nagoya Univ., Nagoya, Aichi, Japan. 2 Nagoya Univ. IMaSS, Nagoya, Aichi, Japan.
P158
Electron traps with extremely long capture time constant related to threading dislocations in n-type GaN with oxygen ion implantation and annealing
Keisuke Hayashi1, Masahiro Horita1,2, Ryo Tanaka3, Shinya Takashima3, Katsunori Ueno3, Jun Suda1,2;
1 Nagoya University, Nagoya, Aichi, Japan. 2 Institute of Materials and Systems for Sustainability (IMaSS), Nagoya, Aichi, Japan. 3 Fuji Electric Co., Ltd, Hino, Tokyo, Japan.