2025

International Presentations

15^th International Conference on Nitride Semiconductors（ICNS-15)

(Invited) Jun Suda ” GaN-on-GaN Devices for Next Generation Electronics” 15^th International Conference on Nitride Semiconductors (Malmö, Sweden), ED-Thu-B6

Testu Kachi, Takumi Hirata, Kenji Ito, Tetsuo Narita and Jun Suda “Effects of the high pressure annealing on threshold voltages in GaN-MOSFETs”, 15^th International Conference on Nitride Semiconductors (Malmö, Sweden), ED-Tue-P14

TaeGi Lee, Akira Yoshikawa, Sho Sugiyama, Manabu Arai, Yuji Ando and Jun Suda, Hiroshi Amano “Metalorganic Vapor Phase Epitaxy Grown Pseudomorphic AlN/GaN/AlN HEMTs on AlN Substrates with Breakdown Field of 2 MV/cm”, 15^th International Conference on Nitride Semiconductors (Malmö, Sweden), ED-Mon-P4

Kensuke Sumida, Kacper Sierakowski, Tomasz Sochacki, Masahiro Horita, Michał Boćkowski, Tetsu Kachi and Jun Suda, “Ultra-high-pressure annealing with a carbon capping layer for activation of Mg ion-implanted GaN”, 15^th International Conference on Nitride Semiconductors (Malmö, Sweden), PC-Mon-5

Kazuki Kitagawa, Tsutomu Uesugi, Masahiro Horita, Tetsu Kachi and Jun Suda, “Breakdown Voltage Analysis of Vertical GaN p-n Junction Diodes with Junction Termination Extension Formed by Channeled Mg Implantation”, 15^th International Conference on Nitride Semiconductors (Malmö, Sweden), ED-Thu-B13

Yuki Ichikawa, Katsunori Ueno, Tsurugi Kondo, Ryo Tanaka, Shinya Takashima and Jun Suda, “Unified explanation of bias dependence of threshold voltage shift under positive bias stress in GaN planer MOSFETs with SiO₂ gate dielectric”, 15^th International Conference on Nitride Semiconductors (Malmö, Sweden), ED-Fri-B5

Nami Kusunoki, Yuki Ichikawa, Tohru Oka, Nariaki Tanaka, Kazuya Hasegawa, Takatomi Izumi, Takaki Niwa
and Jun Suda, “Anomalous Output Characteristics in GaN Vertical Trench MOSFETs under Large Drain Voltage”, 15^th International Conference on Nitride Semiconductors (Malmö, Sweden), ED-Thu-B10

Yusuke Hirayama, Masahiro Horita, Jun Suda, Shota Kaneki and Hajime Fujikura, “Extremely small trap concentrations in quartz-free hydride vapor phase epitaxy-grown n-type GaN confirmed by capacitance transient spectroscopy”, 15^th International Conference on Nitride Semiconductors (Malmö, Sweden), GR-Mon-P4

Fumiyuki Sei, Kenji Ito, Masahiro Horita, Tetsu Kachi and Jun Suda, “New Interpretation of Fermi-level Pinning Behavior in P-type GaN MOS Capacitors via Temperature-Dependent C-V measurements”, 15^th International Conference on Nitride Semiconductors (Malmö, Sweden), ED-Thu-P24

The 37th International Symposium on Power Semiconductor Devices and ICs（ISPSD2025）

Kazuki Kitagawa, Tsutomu Uesugi, Masahiro Horita, Tetsu Kachi, Jun Suda, “Analysis of Acceptor Activation and Lateral Diffusion of Channeled-implanted Mg Atoms in Vertical GaN Junction Barrier Schottky Diodes”, The 37th International Symposium on Power Semiconductor Devices and ICs (Kumamoto, Japan), GaN2-P03

国内学会

第44回電子材料シンポジウム (The 44th Electronic Materials Symposium EMS-44)

イオン注入および超高圧アニールによる高濃度MgドープGaNコンタクトの電気的特性
Daiki Yamanaka, Masahiro Horita, Tetsu Kachi and, Jun Suda 第44回電子材料シンポジウム, 奈良, Fr1-27

Mg ドープp型GaNエピタキシャル成長層にイオン注入および超高圧アニールを行った時の注入イオン種が実効アクセプタ密度におよぼす影響
Honoka Itakura, Masahiro Horita, Tetsu Kachi and, Jun Suda 第44回電子材料シンポジウム, 奈良, Fr1-26

第86回応用物理学会秋季学術講演会

過渡容量分光法によるQuartz-free-HVPE成長高純度n型GaNのトラップ評価
平山 祐輔¹、堀田 昌宏^1,2、須田 淳^1,2、金木 奨太³、藤倉 序章³ (1.名大院工、2.名大未来研、3.住友化学)
第86回応用物理学会秋季学術講演会, 愛知, 2025/9/8, 8a-N322-3