International Journals

M. Kaneko, S. Ueta, M. Horita, T. Kimoto, and J. Suda, “Deep-ultraviolet light emission from 4H-AlN/4H-GaN short-period superlattice grown on 4H-SiC (11-20)”, Appl. Phys. Lett., 112, 012106 (2018).

N. Sawada, T. Narita, M. Kanechika, T. Uesugi, T. Kachi, M. Horita, T. Kimoto, and J. Suda, “Sources of carrier compensation in metalorganic vapor phase epitaxy-grown homoepitaxial n-type GaN layers with various doping concentrations”, Appl. Phys. Exp., 11, 041001 (2018).

K. Kanegae, M. Kaneko, T. Kimoto, M. Horita, and J. Suda, “Characterization of carrier concentration and mobility of GaN bulk substrates by Raman scattering and infrared reflectance spectroscopies”, Jpn. J. Appl. Phys., 57, 070309 (2018).

K. Kanegae, M. Horita, T. Kimoto, and J. Suda, “Accurate method for estimating hole trap concentration in n-type GaN via minority carrier transient spectroscopy”, Appl. Phys. Express, 11, 071002 (2018).

T. Maeda, T. Narita, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, and J. Suda, “Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage”, Appl. Phys. Lett., 112, 252104 (2018).

T. Maeda, X. Chi, M. Horita, J. Suda, and T. Kimoto, “Phonon-assisted optical absorption due to Franz-Keldysh effet in 4H-SiC p-n junction diode under high reverse bias voltage”, Appl. Phys. Express, 11, 091302 (2018).

T. Kimoto, H. Niwa, T. Okuda, E. Saito, Y. Zhao, S. Asada, and J. Suda, “Carrier lifetime and breakdown phenomena in SiC power device material”, J. Phys. D: Appl. Phys., 51, 363001 (2018).

T. Okuda, T. Kimoto, and J. Suda, “A comparative study on electrical characteristics of 1-kV pnp and npn SiC bipolar junction transistors”, Jpn. J. Appl. Phys., 57, 04FR04 (2018).

 

 

International Presentations

T. Maeda, M. Okada, M. Ueno, Y. Yamamoto, T. Narita, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, and J. Suda, “Franz-Keldysh effect in GaN Schottky barrier diodes and p-n junction diodes under high reverse bias voltage”,
60th Electronic Materials Conference (University of California, Santa Barbara, USA, 2018), #B03.

T. Maeda, M. Okada, M. Ueno, Y. Yamamoto, T. Kimoto, M. Horita, and J. Suda, “Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode consistently obtained by C-V, I-V and IPE measurements”,
Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 2018 (Kitakyusyu, Japan, 2018), A7-3.

K. Kanegae, M. Horita, T. Kimoto, and J. Suda, “Measurement of H1 trap concentration in MOVPE-grown homoepitaxial n-type GaN by optical isothermal capacitance transient spectroscopy using sub-bandgap photoexcitation”,
Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 2018 (Kitakyusyu, Japan, 2018), A7-4.

K. Kanegae, M. Horita, T. Kimoto, and J. Suda, “Accurate estimation of H1 trap concentration in n-type GaN layers”,
International Symposium on Growth of Ⅲ-Nitrides (Warsaw, Poland, 2018), Tu4.4.

T. Maeda, X. Chi, M. Horita, J. Suda, and T. Kimoto, “Photocurrent induced by Franz-Keldysh effect in a 4H-SiC p-n junction diode under high reverse bias voltage”,
Europ. Conf. on Silicon Carbide and Related Materials 2018 (Birmingham, UK, 2018), TU.02b.2.

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, and J. Suda, “Measurement of Avalanche Multiplication Factor in GaN p-n Junction Diode Using Sub-bandgap Light Absorption Due to Franz-Keldysh Effect”,
2018 Int. Conf. on Solid-State Devices and Materials (Tokyo, Japan, 2018), D-7-02.

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, and J. Suda, “Temperature Dependence of Avalanche Multiplication in GaN PN Diodes Measured by Light Absorption Due to Franz-Keldysh Effect”,
Int. Workshop on Nitride Semiconductors (Kanazawa, Japan, 2018), ED6-3.

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, and J. Suda, “Shockley-Read-Hall Lifetime in Homoepitaxial p-GaN Extracted from the Recombination Current in GaN p-n Junction Diodes”,
Int. Workshop on Nitride Semiconductors (Kanazawa, Japan, 2018), CR10-5.

K. Kanegae, H. Fujikura, Y. Otoki, T. Konno, T. Yoshida, M. Horita, T. Kimoto, and J. Suda, “DLTS studies of quartz-free-HVPE-grown homoepitaxial n-type GaN”,
Int. Workshop on Nitride Semiconductors (Kanazawa, Japan, 2018), CR11-2.

M. Horita, T. Narita, T. Kachi, T. Uesugi, and J. Suda, “Deep levels introduced by electron beam irradiation in the energy range from 100 keV to 2 MeV in MOVPE-grown homoepitaxial n-type GaN”,
Int. Workshop on Nitride Semiconductors (Kanazawa, Japan, 2018), CR11-1.

K. Kanegae, T. Narita, K. Tomita, T. Kachi, T. Kimoto, M. Horita, and J. Suda, “Hole occupancy ratio of H1 trap in homoepitaxial n-type GaN under sub-bandgap light irradiation” (invited),
Int. Workshop on Nitride Semiconductors (Kanazawa, Japan, 2018), CR16-1.

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, and J. Suda,
“Parallel-Plane Breakdown Fields of 2.8-3.5 MV/cm in GaN-on-GaN p-n Junction Diodes with Double-Side-Depleted Shallow Bevel Termination”,
64th Int. Electron Device Meeting (IEDM2018), (San Francisco, USA, 2018), 30.1.

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