International Journals

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, and J. Suda, “Design and Fabrication of GaN p-n Junction Diodes with Negative Beveled-Mesa Termination”,
IEEE Electron Device Lett., 40, 6 (2019).

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, and J. Suda, “Shockley-Read-Hall Lifetime in Homoepitaxial p-GaN Extracted from Recombination Current in GaN p-n+ Junction Diodes”,
Jpn. J. Appl. Phys., 58, SCCB14 (2019).

K. Kanegae, H. Fujikura, Y. Otoki, T. Konno, T. Yoshida, M. Horita, T. Kimoto, and J. Suda, “Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy,” Appl. Phys. Lett., 115, 012103 (2019).

Conference Proceedings

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, and J. Suda, “Estimation of Impact ionization Coefficient in GaN by Photomultiplication Measurements Utilizing Franz-Keldysh Effect”,
Proceedings of the 31st IEEE International Symposium on Power Semiconductor Devices&ICs (ISPSD), pp. 59-62 (2019).

International Presentations

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, and J. Suda, “Estimation of Impact ionization Coefficient in GaN by Photomultiplication Measurements Utilizing Franz-Keldysh Effect”, 31st
IEEE International Symposium on Power Semiconductor Devices&ICs (ISPSD2019), (Shanghai, China, 2019), B1L-A-1.

T. Maeda, T. Narita, H. Ueda, M. Kanechika, T. Uesugi, T. Kachi, T. Kimoto, M. Horita, and J. Suda, “Estimation of Impact Ionization Coefficient in GaN and Its Temperature Dependence by Photomultiplication Measurements Utilizing Franz-Keldysh Effect”,
13th International Conference on Nitride Semiconductors (Bellevue, Washington, USA, 2019), B04.07.

K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, and J. Suda, “Determination Methods of H1 Trap Concentration in N-Type GaN Schottky Barriers via Sub-Bandgap-Light Isothermal Capacitance Transient Spectroscopy”,
13th International Conference on Nitride Semiconductors (Bellevue, Washington, USA, 2019), J01.03.

K. Kanegae, T. Narita, K. Tomita, T. Kachi, M. Horita, T. Kimoto, and J. Suda, “Photon energy dependence of photoionization cross section ratio of electron to hole for the carbon-related hole trap in n-type GaN”,
30th International Conference on Defects in Semiconductors (Seattle, Washington, USA, 2019), Poster Session Ⅱ 2.

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