International Journals
M. Kaneko, T. Kimoto, and J. Suda, “Phonon frequencies of a highly strained AlN layer coherently grown on 6H-SiC (0001)”,
AIP Advances, 7, 015105 (2017).
T. Maeda, M. Okada, M. Ueno, Y. Yamamoto, T. Kimoto, M. Horita, and J. Suda, “Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode”,
Appl. Phys. Express, 10, 051002 (2017).
S. Asada, T. Kimoto and J. Suda, “Design Criterion for SiC BJTs to Avoid ON-Characteristics Degradation Due to Base Spreading Resistance”, IEEE Trans. Electron Devices, 64, 2086-2091 (2017).
S. Asada, T. Kimoto and J. Suda, “Effect of Postoxidation Nitridation on Forward Current–Voltage Characteristics in 4H–SiC Mesa p-n Diodes Passivated With SiO2“, IEEE Trans. Electron Devices, 64, 3016-3018 (2017).
M. Horita, S. Takashima, R. Tanaka, H. Matsuyama, K. Ueno, M. Edo, T. Takahashi, M. Shimizu, and J. Suda, “Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations”, Jpn. J. Appl. Phys., 56(3), 031001 (2017).
International Presentations
Takashima, K. Ueno, H. Matsuyama, M. Edo, T. Takahashi, M. Shimizu, M. Horita, J. Suda, and K. Nakagawa, “MOS channel properties on homoepitaxially-grown p-type GaN layers”,
3rd Intensive Discussion on Growth of Nitride Semiconductors (Sendai, Japan, 2017), Session V-3.
M. Horita, T. Narita, T. Kachi, T. Uesugi, J. Suda, “Nitrogen displacement related deep level traps in homoepitaxial n-type GaN”,
12th International Conference on Nitride Semiconductors (Strasbourg, France, 2017), A11.4.
T. Maeda, M. Okada, M. Ueno, Y. Yamamoto, T. Kimoto, M. Horita, J. Suda, “Temperature dependence of Schottky barrier height of Ni/n-GaN consistently obtained by C-V and forward I-V measurements”,
12th International Conference on Nitride Semiconductors (Strasbourg, France, 2017), C10.6.
K. Kanegae, T. Kimoto, M. Horita, J. Suda, “Investigation of hole traps in n-type homoepitaxial GaN by ODLTS focusing on sub-bandgap-light optical excitation process”,
12th International Conference on Nitride Semiconductors (Strasbourg, France, 2017), C02.24.
M. Kaneko, T. Kimoto, J. Suda, “Intentional introduction of misfit dislocations at AlN/SiC heterointerface”,
6th CIRFE Seminar (Nagoya, Japan, 2017).
T. Enokizono, T. Kimoto and J. Suda, “Fabrication of full-SiC comb-drive resonators by conduction-type-selective electrochemical etching”,
Int. Conf. on Silicon Carbide and Related Materials 2017 (Washington, D.C., USA, 2017), MO.EP.5.