Award

応用物理学会講演奨励賞
電子線照射により窒素変位関連欠陥を選択的に導入したホモエピタキシャル成長GaN p-n接合ダイオードの再結合電流解析
〇遠藤 彗1、堀田 昌宏1,2、須田 淳1,2 (1.名大院工、2.名大未来研)
第70回応用物理学会春季学術講演会, 上智大学四谷キャンパス/オンライン, 2022/3/17, 17p-A301-6.

第15回ナノ構造エピタキシャル成長講演会 発表奨励賞
ホモエピタキシャル成長GaN中の窒素原子変位に関連した再結合中心の評価
遠藤彗1、堀田昌宏1, 2、須田淳1, 2
1名古屋大学大学院工学研究科、2名古屋大学未来研

Best Student Award
D. Tanaka, K. Iso and J. Suda, “Guidelines for selecting appropriate dopants and concentrations for semi-insulating GaN substrates”,
14th International Conference on Nitride Semiconductors (Fukuoka, Japan, 2023), CH17-4.

International Journals

M. Matys, K. Kitagawa, T. Narita, T. Uesugi, M. Bockowski, J. Suda and T. Kachi, “Design and fabrication of vertical GaN junction barrier Schottky rectifiers using Mg ion implantation”,
Jpn. J. Appl. Phys. 62, SN0801 (2023).

Y. Ando, H. Takahashi, R. Makisako, A. Wakejima and J. Suda, “RF characteristics of 150-nm AlGaN/GaN high electron mobility transistors fabricated using i-line stepper lithography”,
Electron. Lett., 59 (2023).

T. Narita, M. Kanechika, K. Tomita, Y. Nagasato, T. Kondo, T. Uesugi, S. Ikeda, M. Kosaki, T. Oka and J. Suda, “Effects of proton irradiation-induced point defects on Shockley-Read-Hall recombination lifetimes in homoepitaxial GaN p-n junctions”,
Appl. Phys. Lett. 122, 113505 (2023).

D. Tanaka, K. Iso and J. Suda, “Comparative study of electrical properties of semi-insulating GaN substrates grown by hydride vapor phase epitaxy and doped with Fe, C, or Mn”,
J. Appl. Phys. 133, 055701 (2023).

K. Hara, E. Yamamoto, J. Ohara, S. Onda and J. Suda, “Effect of H2 addition on growth rate and surface morphology of GaN (0001) grown by halide-vapor-phase epitaxy using GaCl3,
Jpn. J. Appl. Phys. 62, 020903 (2023).

K. Aoshima, M. Horita and J. Suda, “Correlation between non-ionizing energy loss and production rate of electron trap at EC – (0.12-0.20) eV formed in gallium nitride by various types of radiation”,
Appl. Phys. Lett. 122, 012106 (2023).

T. Ishida, T. Kachi and J. Suda, “Comparison of switching performance of high-speed GaN vertical MOSFETs with various gate structures based on TCAD simulation”,
Jpn. J. Appl. Phys. 62, 014001 (2023).

H. Takahashi, Y. Ando, Y. Tsuchiya, A. Wakejima and J. Suda, “Electrical Characteristics of Gated Anode Diodes Based on Normally Off Recessed-Gate GaN High-Electron-Mobility Transistors for Rectenna Applications”,
Phys. Status. Solidi A. 220, 2299837 (2023).

International Presentations

T. Kachi, M. Matys, K. Kitagawa, T. Uesugi, T. Narita and J. Suda, “Vertical GaN Power Devices Using Selective Area Doping with Ion Implantation”,
14th International Conference on Nitride Semiconductors (Fukuoka, Japan, 2023), ED2-1.

K. Sumida, M. Horita, T. Kachi and J. Suda, “Depth Analysis of Acceptor and Compensating Donor Concentrations in Mg-implanted p-GaN with Ultra-High-Pressure Annealing”,
14th International Conference on Nitride Semiconductors (Fukuoka, Japan, 2023), ED6-6.

T. Hirata, M. Kanechika, T. Tokozumi, T. Kanechika and J. Suda, “Improvement of AlSiO/n-GaN MOS characteristics by ultra-high-pressure deposition annealing”,
14th International Conference on Nitride Semiconductors (Fukuoka, Japan, 2023), ED5-5.

M. Horita and J. Suda, “Characterization of nitrogen-displacement-related traps in GaN”,
14th International Conference on Nitride Semiconductors (Fukuoka, Japan, 2023), CH7-1.

Y. Ando, K. Oishi, H. Takahashi, R. Makisako, A. Wakejima and J. Suda, “Improved Turn-On Voltage Controllability in AlGaN/GaN Gated-Anode Diodes Using Etch Endpoint Detection Process”
14th International Conference on Nitride Semiconductors (Fukuoka, Japan, 2023), ED9-1.

T. Watanabe, H. Takahashi, A. Wakejima, Y. Ando and J. Suda, “Improvement of Breakdown Voltage by Utilizing Moderately-Doped Contact Layers in AlGaN/GaN Gated-Anode Diodes for Microwave Rectification”,
14th International Conference on Nitride Semiconductors (Fukuoka, Japan, 2023), ED9-2.

S. Yamada, K. Tanaka, M. Arai, T. Kachi and J. Suda, “Impacts of subsequent nitrogen radical treatment on surface roughness and electrical properties on n-type GaN films deposited by reactive sputtering”,
14th International Conference on Nitride Semiconductors (Fukuoka, Japan, 2023), ED12-3.

Y. Ichikawa, K. Ueno, T. Kondo, R. Tanaka, S. Takashima and J. Suda, “Impact of post-deposition anneal on threshold voltage instability due to bias stress in GaN planer MOSFETs with SiO2 gate dielectric”,
14th International Conference on Nitride Semiconductors (Fukuoka, Japan, 2023), ED14-7.

M. Endo, M. Horita and J. Suda, “Evaluation of recombination centers originating from nitrogen-displacement-related defects in homoepitaxial n-type and p-type GaN”,
14th International Conference on Nitride Semiconductors (Fukuoka, Japan, 2023), CH15-5.

C. Kojima, M. Horita and J. Suda, “Hall-effect Measurement of Homoepitaxial N-type GaN with Nitrogen-displacement-related Point Defects Formed by Electron Beam Irradiation”,
14th International Conference on Nitride Semiconductors (Fukuoka, Japan, 2023), CH15-6,

D. Tanaka, K. Iso and J. Suda, “Guidelines for selecting appropriate dopants and concentrations for semi-insulating GaN substrates”,
14th International Conference on Nitride Semiconductors (Fukuoka, Japan, 2023), CH17-4.

K. Kitagawa, M. Matys, T. Kachi and J. Suda, “Expansion of Optimized Dose Range in Junction Termination Extension Structure for GaN Vertical Power Devices by Utilizing Mg Channeling Implantation”,
14th International Conference on Nitride Semiconductors (Fukuoka, Japan, 2023), TuP-ED22.

H. Iguchi, M. Horita and J. Suda, “Annealing behavior of deep levels induced by ultra-low-dose Si-ion implantation and subsequent annealing in homoepitaxial n-type GaN”,
14th International Conference on Nitride Semiconductors (Fukuoka, Japan, 2023), ThP-CH-28.

M. Inagaki, T. Oka, N. Tanaka, K. Hasegawa, T. Izumi, T. Ina, G. Nishio, T. Niwa and J. Suda, “Mg Concentration Dependence of Threshold Voltage Shift under Sub-Eg Light Illumination and Positive Vias Stress in Vertical GaN Trench MOSFETS”,
14th International Conference on Nitride Semiconductors (Fukuoka, Japan, 2023), ThP-ED-31.

国内会議

[講演奨励賞受賞記念講演] 電子線照射により窒素変位関連欠陥を選択的に導入したホモエピタキシャル成長GaN中の再結合中心の評価
〇遠藤 彗1、堀田 昌宏1,2、須田 淳1,2 (1.名大院工、2.名大未来研)
第84回応用物理学会秋季学術講演会, 熊本, 2023/09/22, 22a-B201-1.

超低濃度Siイオン注入を行ったn型GaNエピタキシャル層上に作製したショットキーバリアダイオードの電流-電圧特性
〇井口 紘子1、堀田 昌宏1,2、須田 淳1,2 (1.名大院工、2.名大未来研)
第84回応用物理学会秋季学術講演会, 熊本, 2023/09/21, 21p-B201-12.

Mg/N 共注入および超高圧アニールを用いて作製した GaN p-n 接合ダイオード
〇北川 和輝1、加地 徹2、須田 淳1,2(1.名大院工、2.名大未来研)
第84回応用物理学会秋季学術講演会, 熊本, 2023/09/21, 21p-B201-14.

HVPE法で作製したFe,C,Mnドープ半絶縁性GaN基板の電気的特性評価
〇田中 大貴1、磯 憲司2,3、須田 淳1,3 (1.名大院工、2.三菱ケミカル、3.名大未来研)
第84回応用物理学会秋季学術講演会, 熊本, 2023/09/22, 22a-B201-5.

AlSiO/n-GaN MOS構造の容量-電圧特性における超高圧アニール時間依存性
〇平田 拓巳1、兼近 将一2、加地 徹2、須田 淳1,2 (1.名大院工、2.名大未来研) 第84回応用物理学会秋季学術講演会, 熊本, 2023/09/22, 22p-B201-6

スパッタ成膜n型GaN層の表面形態に対する窒素ラジカル照射効果
〇山田 真嗣1、田中 希帆1、新井 学1、加地 徹1、須田 淳1 (1.名大)
第84回応用物理学会秋季学術講演会, 熊本, 2023/09/22, 22p-B201-14.