米国ワシントン州にて2019/7/7-12に開催された窒化物半導体国際会議(International Conference on Nitiride Semiconductors, ICNS-13)において須田教授がノーベル賞受賞者のUCSBの中村修二先生に続いて基調講演を行いました。
SESSION PL01: Plenary Session I
Session Chairs: Stacia Keller and Christian Wetzel
Monday Morning, July 8, 2019
8:45 AM
Welcome / Opening Ceremony by W. Alan Doolittle, Georgia Institute of
Technology
9:00 AM *PL01.01
Developments of Nonpolar/Semipolar Edge Emitting Laser Diodes and
VCSELs
Shuji Nakamura; University of California Santa Barbara, United
States.
9:45 AM *PL01.02
Development of Vertical GaN Power Devices
Jun Suda; Nagoya University,
Japan.
11:00 AM *PL01.03
Efficiency of Nitride LEDs—Impact of Point and Extended Defects
Nicolas Grandjean; École Polytechnique Fédérale de Lausanne (EPFL), Switzerland.
11:45 AM *PL01.04
Emerging Applications of III-Nitride Nanocrystals
Zetian Mi; University of Michigan, United States