SSDM 2021

固体材料素子コンファレンス(SSDM 2021, 2021/9/6-9)において当研究室から以下の発表が行われました。

1. [D-7-06] SiO2/n-GaN MOS structures with low interface state density formed by plasma-enhanced atomic layer deposition method
   〇Keito Aoshima¹, Noriyuki Taoka¹, Masahiro Horita^1,2, Jun Suda^1,2
   (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)
   
2. [D-7-07] Corner Shape Control of GaN Trench Structure Formed by Inductively Coupled Plasma Reactive Ion Etching
   〇Shinji Yamada¹, Takashi Ishida¹, Toshiyuki Nakamura², Ryuichiro Kamimura², Jun Suda¹,Tetsu Kachi¹(1.Nagoya Univ., 2.ULVAC, Inc.)