固体材料素子コンファレンス(SSDM 2021, 2021/9/6-9)において当研究室から以下の発表が行われました。
- [D-7-06] SiO2/n-GaN MOS structures with low interface state density formed by plasma-enhanced atomic layer deposition method
〇Keito Aoshima1, Noriyuki Taoka1, Masahiro Horita1,2, Jun Suda1,2
(1.Nagoya Univ., 2.IMaSS, Nagoya Univ.) - [D-7-07] Corner Shape Control of GaN Trench Structure Formed by Inductively Coupled Plasma Reactive Ion Etching
〇Shinji Yamada1, Takashi Ishida1, Toshiyuki Nakamura2, Ryuichiro Kamimura2, Jun Suda1,Tetsu Kachi1(1.Nagoya Univ., 2.ULVAC, Inc.)