米国ワシントン州にて2019/7/7-12に開催された窒化物半導体国際会議(International Conference on Nitiride Semiconductors, ICNS-13)において当研究室から以下の発表が行われました。
EP01.06
Deep Level Traps Introduced in GaN Layers by High-Temperature
Thermal Treatment with SiN Cap Layers Satomu Furuta1, Masahiro
Horita1, 2, Nariaki Tanaka3, Tohru Oka3 and Jun Suda1, 2; 1Nagoya University,
Japan; 2Institute of Materials and Systems for Sustainability, Japan; 3Toyoda
Gosei, Japan.
B04.07
Estimation of Impact Ionization Coefficient in GaN and Its Temperature
Dependence by Photomultiplication Measurements Utilizing Franz-
Keldysh Effect Takuya Maeda1, Tetsuo Narita2, Hiroyuki Ueda2, Masakazu
Kanechika2, Tsutomu Uesugi2, Tetsu Kachi3, Tsunenobu Kimoto1, Masahiro
Horita1, 3 and Jun Suda1, 3; 1Kyoto University, Japan; 2Toyota Central R&D
Labs., Inc., Japan; 3Nagoya University, Japan.
G05.01
Growth of P-Type GaN Layers with Low Mg Concentrations by Using
MOVPE and the Application to Vertical Power Devices Tetsuo Narita1,
Kazuyoshi Tomita1, Yutaka Tokuda2, Tatsuya Kogiso2, Takuya Maeda3,
Masahiro Horita3, 4, Masakazu Kanechika1, Hiroyuki Ueda1, Tetsu Kachi4 and
Jun Suda3, 4; 1Toyota Central R&D Labs. Inc., Japan; 2Aichi Institute of
Technology, Japan; 3Kyoto University, Japan; 4Nagoya University, Japan.
E01.01
Clear Evidence of P-Type Formation by Hall-Effect Measurements
of Mg-Ion Implanted GaN Activated with Ultra-High-Pressure
Annealing Hideki Sakurai1, 2, 3, Masato Omori1, Shinji Yamada1, 2, 3, Akihiko
Koura3, Hideo Suzuki3, Tetsuo Narita4, Keita Kataoka4, Masahiro Horita1, 2,
Michal Boćkowski1, 5, Jun Suda1, 2 and Tetsu Kachi1; 1Nagoya University,
Japan; 2Nagoya University, Japan; 3ULVAC, Inc, Japan; 4Toyota Central R&D
Labs, Inc., Japan; 5Institute of High Pressure Physics Polish Academy of
Sciences, Poland.
J01.03
Determination Methods of H1 Trap Concentration in N-Type GaN
Schottky Barriers via Sub-Bandgap-Light Isothermal Capacitance
Transient Spectroscopy Kazutaka Kanegae1, Tetsuo Narita2, Kazuyoshi
Tomita2, Tetsu Kachi3, Masahiro Horita1, 3, Tsunenobu Kimoto1 and Jun
Suda1, 3; 1Kyoto University, Japan; 2Toyota Central R&D Labs. Inc.,
Japan; 3Nagoya University, Japan.
B08.04
Impact of Gamma-Ray Irradiation on Capacitance-Voltage Characteristics
of Al2O3/GaN MOS Diodes with Post-Metallization Annealing Keito
Aoshima1, Masahiro Horita1, 2, Shota Kaneki3, Jun Suda1, 2 and Tamotsu
Hashizume3; 1Nagoya University, Japan; 2Nagoya University, Japan; 3Hokkaido
University, Japan.
B09.06
Impact of Gamma-Ray Irradiation on Device Characteristics of p-GaN/
AlGaN/GaN Normally-Off High-Electron-Mobility Transistors Koki
Tsurimoto1, Masahiro Horita1, 2 and Jun Suda1, 2; 1Nagoya University,
Japan; 2Nagoya University, Japan.