窒化物半導体国際ワークショップ発表

ドイツ・ベルリンで10/9～10/14に開催される窒化物半導体国際ワークショップ(International Workshop on Nitride Semiconductors, IWN2022)で須田研究室および共同研究先から以下の発表を予定しています。

•  Si concentration dependence of nitrogen-related electron traps introduced by electron beam irradiations to homoepitaxial n-type GaN
•  Depth profiling of a donor-like defect induced by ultra-low-dose Si-ion implantation and subsequent annealing in homoepitaxial n-type GaN
•  Correlation between non-ionizing energy loss and production rates of an electron trap at E_C– (0.12-0.20) eV formed by various energetic particles in gallium nitride
•  Mg-implanted vertical GaN junction barrier Schottky diodes with low on-resistance, high breakdown voltage, low turn-on voltage and avalanche capability
• Electrical characterization of AlGaN/GaN HEMTs fabricated on semi-insulating GaN substrates doped with Fe, C, or Mn
• Electrical characteristics of gated-anode diodes based on normally-off recessed-gate GaN HEMT for rectenna application
• Successful p-type activation of Mg-implanted GaN combined with sequential N implantation and atmospheric pressure anneal with AlN cap
• Threshold voltage instability under positive bias stress in vertical GaN trench MOSFETs
• Growth of GaN by tri-halide vapor phase epitaxy with GaCl3 gas synthesized by gallium metal and chlorine gas in external supply system
• Temperature dependence of impact ionization coefficients in GaN
• Percentage of C_N acceptors to residual carbon atoms in n-type GaN homoepitaxial layers
• Realization of low specific contact resistance on N-polar GaN surface using highly-doped n-type GaN film deposited by low-temperature reactive sputtering
• Investigation of annealing conditions of Mg-implanted GaN by ultra-high-pressure annealing for further reduction of annealing pressure
• Increase of reverse leakage current at GaN p-n junctions having different blocking voltages after forward current stress