スウェーデンマルメにて7/6-11で開催されたICNS-15(15th International Conference on Nitride Semiconductors)において、当研究室から以下の発表が行われました。
ED-Thu-B6
(Invited) GaN-on-GaN Devices for Next Generation Electronics
Jun Suda
Nagoya University, Nagoya, Aichi, Japan.
ED-Tue-P14
Effects of the high pressure annealing on threshold voltages in GaN-MOSFETs
Tetsu Kachi1, Takumi Hirata1, Kenji Ito2, Tetsuo Narita3, Jun Suda1
1Nagoya University, 2Nagoya University, Toyota Central R&D Labs., Inc.,3Toyota Central R&D Labs., Inc.
ED-Mon-P4
Metalorganic Vapor Phase Epitaxy Grown Pseudomorphic AlN/GaN/AlN HEMTs on AlN Substrates with Breakdown Field of 2 MV/cm
TaeGi Lee1, Akira Yoshikawa1, Sho Sugiyama1, Manabu Arai2, Yuji Ando2, Jun Suda2, Hiroshi Amano2
1Asahi Kasei, Tokyo, Japan, 2Nagoya University, Aichi, Japan
PC-Mon-5
Ultra-high-pressure annealing with a carbon capping layer for activation of Mg ion-implanted GaN
Kensuke Sumida1,Kacper Sierakowski2, Tomasz Sochacki2, Masahiro Horita1, Michał Boćkowski2, Tetsu Kachi1, Jun Suda1
1Nagoya University, Nagoya, Aichi, Japan, 2Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland
ED-Thu-B13
Breakdown Voltage Analysis of Vertical GaN p-n Junction Diodes withJunction Termination Extension Formed by Channeled Mg Implantation
Kazuki Kitagawa1, Tsutomu Uesugi2, Masahiro Horita1, Tetsu Kachi2, Jun Suda1
1Nagoya University, Department of Electronics, Nagoya, Japan, 2Nagoya University, Institute of Materials and Systems for Sustainability (IMaSS), Nagoya, Japan
ED-Fri-B5
Unified explanation of bias dependence of threshold voltage shift under positive bias stress in GaN planer MOSFETs with SiO2 gate dielectric
Yuki Ichikawa1, Katsunori Ueno2, Tsurugi Kondo2, Ryo Tanaka2, Shinya Takashima2, Jun Suda3
1Nagoya Univesity, Nagoya, Aichi , Japan, 2Fuji Electric Co., Ltd., Tokyo, Japan
3Nagoya Univesity, Nagoya, Aichi , Japan, Institute of Materials and Systems for Sustainability,
Nagoya University, Aichi
ED-Thu-B10
Anomalous Output Characteristics in GaN Vertical Trench MOSFETs under Large Drain Voltage
Nami Kusunoki1, Yuki Ichikawa1, Tohru Oka2, Nariaki Tanaka3, Kazuya Hasegawa3, Takatomi Izumi3, Takaki Niwa3, Suda Jun4
1Nagoya University, Nagoya, Aichi, Japan, 2Nagoya University, Nagoya, Aichi, Japan; Toyoda Gosei, Ama, Aichi, Japan, 3Toyoda Gosei, Ama, Aichi, Japan, 4IMaSS, Nagoya University, Nagoya, Aichi, Japan
GR-Mon-P4
Extremely small trap concentrations in quartz-free hydride vapor phase epitaxy-grown n-type GaN confirmed by capacitance transient spectroscopy
Yusuke Hirayama1, Masahiro Horita2, Jun Suda2, Shota Kaneki3, Hajime Fujikura3
1Nagoya University, Nagoya, Aichi, Japan, 2Nagoya University, Nagoya, Aichi, Japan; Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Aichi, Japan, 3Sumitomo Chemical Corporation, Hitachi, Ibaraki, Japan
ED-Thu-P24
New Interpretation of Fermi-level Pinning Behavior in P-type GaN MOS Capacitors via Temperature-Dependent C-V measurements
Fumiyuki Sei1, Kenji Ito2, Masahiro Horita3, Tetsu Kachi2, Jun Suda3
1Department of Electronics, Nagoya University, Nagoya 464-8601, Japan, 2IMaSS, Nagoya University, Nagoya 464-8601, Japan, 3Department of Electronics, Nagoya University, Nagoya 464-8601, Japan; IMaSS, Nagoya, University, Nagoya 464-8601, Japan